PART |
Description |
Maker |
MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http:// ONSEMI[ON Semiconductor]
|
2N4922 2N4921 2N4923 2N4921-D |
Medium-Power Plastic NPN Silicon Transistors 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
|
ONSEMI[ON Semiconductor]
|
BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
BUX84 BUX84A |
NPN PLASTIC POWER TRANSISTORS
|
TRANSYS Electronics Limited
|
BDX53 BDX54 BDX53C BDX53A BDX54A BDX54B |
NPN PLASTIC POWER TRANSISTORS
|
Continental Device India Li... Continental Device Indi...
|
BD952 BD950 BD951 BD953 BD954 BD955 BD956 BD949 |
NPN PLASTIC POWER TRANSISTORS
|
CDIL[Continental Device India Limited]
|
PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
2N6388G 2N638706 2N6387 2N6387G 2N6388 |
Plastic Medium?Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ? 80 VOLTS Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
|
ONSEMI[ON Semiconductor]
|
MJE171-D |
Complementary Plastic Silicon Power Transistors NPN
|
ON Semiconductor
|
2N5657 |
PLASTIC NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS
|
New Jersey Semi-Conduct...
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|